基于微觀結(jié)構(gòu)的多晶Cu納米壓痕表面缺陷研究

基于微觀結(jié)構(gòu)的多晶Cu納米壓痕表面缺陷研究Research of Surface Defects of Polycrystalline Copper Nanoindentation Based on Microstructures

本文基于多晶材料的微觀拓?fù)浣Y(jié)構(gòu)，從多晶銅納米壓痕中晶粒內(nèi)部、晶界面、三叉晶界和頂點團(tuán)等四類微觀結(jié)構(gòu)與缺陷結(jié)構(gòu)的配位數(shù)、內(nèi)應(yīng)力、原子勢能等方面研究了壓痕表面位錯缺陷的演化機(jī)制。結(jié)果表明：當(dāng)高維度數(shù)的微觀結(jié)構(gòu)承載壓應(yīng)力時，與其鄰近的低維度數(shù)微觀結(jié)構(gòu)表現(xiàn)為拉應(yīng)力，且更低維度數(shù)的微觀結(jié)構(gòu)（頂點團(tuán)）更易表現(xiàn)為拉應(yīng)力；位錯缺陷形核時其原子具有較高的內(nèi)應(yīng)力與原子勢能，擴(kuò)展時其邊緣的不完全位錯原子內(nèi)應(yīng)力高于內(nèi)部堆垛層錯原子內(nèi)應(yīng)力；位錯形核與擴(kuò)展和內(nèi)應(yīng)力的累積與釋放具有相似的方向性，首先擴(kuò)展至低維數(shù)的頂點團(tuán)、三叉晶界，而后傳遞至高維數(shù)的晶界面并止于晶界面。

In the present technology, the manufacture of MEMS and NEMS are limited by the lack of mechanism of material processing, especially the mechanism of the polycrystalline materials. In this work, based on the microstructures of polycrystalline copper, the evolution mechanism of dislocations on the polycrystalline copper nanoindentation surface is researched by the four types of microstructures in polycrystalline materials, including grain cell, grain boundary, triple junction and vertex points. In addition, the coordination number, internal stress and atomic potential energy of the dislocations defects are also considered. The results show that when the microstructures with high dimension number carrying the compressive stress, the adjacent microstructures with low dimension number appear tensile stress and the microstructures with lower dimension number like vertex points is more likely to appear tensile stress. The dislocation atoms accumulate high internal stress and atomic potential energy during the dislocation nucleation. The internal stress of the imperfect dislocation atoms at the dislocation edge is higher than that of the stacking layer atoms inside the dislocations during the dislocation growth. The process of nucleation and growth, and the internal stress accumulation and release are both have similar directionality. They both firstly extended to the microstructures with lower dimension number like vertex points and triple junction, then expend to and stop at the grain boundary with high dimension number.

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