工作氣體對APCVD石墨烯薄膜生長和性能的影響

工作氣體對APCVD石墨烯薄膜生長和性能的影響Influence of working gas on growth and property of graphene film prepared by APCVD

以銅箔為基底，采用常壓化學(xué)氣相沉積(APCVD)方法制備石墨烯，控制總氣體流量不變，改變甲烷流量(甲烷流量與總氣體流量之比)，利用RAMAN、SEM、分光光度計、四探針電阻率測試儀等對樣品的形貌、結(jié)構(gòu)、透光率及導(dǎo)電性能進行表征，討論甲烷流量比改變對石墨烯生長過程和性能的影響。結(jié)果表明：甲烷流量比越大，甲烷分解出的碳原子越多，銅箔表面覆蓋石墨烯越完整。當甲烷流量比增加到一定程度時，會得到過量的碳原子形成碳原子團聚集在銅箔表面。甲烷流量比越大，所制備的石墨烯ID/IG比值越大，缺陷越多，導(dǎo)電性降低。石墨烯的透光性受到層數(shù)和缺陷的制約，當甲烷流量比為20%時，透光率最高，波長550 nm處透光率達到86%。

Graphene films were prepared by atmospheric pressure chemical vapor deposition (APCVD) method using cooper foils as substrates. The morphology and structure of graphene were tested by SEM and Raman spectroscopy, and the optical and electrical properties were analyzed by UV spectrometer and four-probe instrument. The influences of various methane flow percentage in a certain total flow on the growth and properties of the prepared graphene were studied. The results show that with the increase of methane flow percentage, there are more carbon atoms decomposed by methane, and more area is covered by graphene. When methane flow percentage increases to a certain extent, there is an excess of carbon atoms which is responsible for carbon aggregation forming the clusters on the surface of Cu foil. Meanwhile, with the increase of methane flow percentage, the ID/IG ratio increases, which means there are more defect of graphene and the deterioration of electrical conductivity. The transparency of grapheme film is controlled by its thickness and defects, which can be 86% at 550 nm in wavelength, when the methane flow percentage is 20%.

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